Our Nanoelectronic Devices Computational Group PhD Students

	Anna Christina Price I use the Non-equilibrium Green's function (NEGF) formalism to simulate electron transport in nanostructures with non-local self-energies.
	Muhammad Ali Elmessary 3D Finite Element Monte Carlo Device Simulation with Schrödinger Equation Quantum Corrections. Anisotropy extension of the Schrödinger Equation Quantum Corrections.
	Khaled Ahmeda Measurements and modelling of GaN HEMTs for power applications aiming for normally-off devices with a high breakdown.
	Brendan Ubochi NRN Grant supported PhD student on the project 'Dynamic Characterisation and Modelling of RF GaN HEMTs'.
	Luke Wilson Calculations of molecular structures and transistors using Density Functional Theory.
	Alnazer Mohammed Measurements and characterisation of ZnO nanowire FETs and modelling of metal contacts for nanoscale III-V MOSFETs for future digital applications.
	Mustafa Alqayasi Measurements and modelling of SiC MOSFETs for power applications with a very high breakdown.
	Olujide Adenekan Modelling and optimisation of super-junction multi-gate (non-planar) Si MOSFET for power applications.

Anna Christina Price